Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires
نویسندگان
چکیده
A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm−3. Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indium nitride nanowires also exhibit high carrier concentrations, of the order of 1020 to 1022 cm−3. For both types of nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited by impurity scattering.
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